Formation mechanism of TiN by reaction of tetrakis(dimethylamido)-titanium with plasma-activated nitrogen

Journal Article · Thu Jun 01 04:00:00 EDT 1995 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.2044251· OSTI ID:82895

Weber, A; Klages, C P ^[1]; Gross, M E; Charatan, R M; Brown, W L ^[2]

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1. Fraunhofer-Inst. fuer Schicht- und Oberflaechentechnik, Braunschweig (Germany)
2. AT and T Bell Labs., Murray Hill, NJ (United States)

The metallorganic tetrakis(dimethylamido)-titanium [Ti(NMe{sub 2}){sub 4}] reacts with electron cyclotron resonance plasma-activated nitrogen in the downstream region to form low resistivity crystalline TiN films at substrate temperatures as low as 100 C. The ability to deposit this refractory material at such low temperatures is indicative of a nonthermally activated process. Experiments with labeled nitrogen show that the nitrogen in the TiN films is derived almost exclusively from the plasma gas. Chemical ionization mass spectrometry investigations of the gas mixture in the reactor using labeled nitrogen as the plasma gas reveal the formation of unlabeled amines and what the authors assign to be a three-membered metallacycle intermediate. The results show that the dimethylamido groups are substituted by plasma-activated nitrogen to form pure TiN films. For the first time an almost complete substitution of the ligands on a metallorganic compound using plasma-activated species has been demonstrated.

• Sponsoring Organization: USDOE
• OSTI ID: 82895
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 6 Vol. 142; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
NITRIDATION
ORGANOMETALLIC COMPOUNDS
PLASMA HEATING
REACTION INTERMEDIATES
TITANIUM COMPOUNDS
TITANIUM NITRIDES