The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
Journal Article
·
· Journal of Crystal Growth
OSTI ID:828727
- LBNL Library
No abstract prepared.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- US Department of Energy; Ballistic Missile Defense Organization W31RPD-9-A9604, Office of Naval Research Grants N00014-95-1-1320 and N000014-99-1-0479, National Science Foundation. Society for Technical Communication Program Grant CHE-89-20120; University of Texas at Austin (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 828727
- Report Number(s):
- LBNL--48506
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: 1-4 Vol. 221; ISSN 0022-0248; ISSN JCRGAE
- Country of Publication:
- United States
- Language:
- English
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