Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Consultant, Stevenson Ranch, California 91381 (United States)
A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si doping in the emitter and collector regions was grown by metalorganic chemical vapor deposition on {ital c}-axis Al{sub 2}O{sub 3}. Secondary ion mass spectrometry measurements showed no increase in the O concentration (2{endash}3{times}10{sup 18} cm{sup {minus}3}) in the AlGaN emitter and fairly low levels of C ({approximately}4{endash}5{times}10{sup 17} cm{sup {minus}3}) throughout the structure. Due to the nonohmic behavior of the base contact at room temperature, the current gain of large area ({approximately}90 {mu}m diameter) devices was {lt}3. Increasing the device operating temperature led to higher ionization fractions of the Mg acceptors in the base, and current gains of {approximately}10 were obtained at 300 {degree}C. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 348140
- Journal Information:
- Applied Physics Letters, Vol. 74, Issue 18; Other Information: PBD: May 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design
Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors