Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
AlGaN/GaN pnp heterojunction bipolar transistors were fabricated using a low-damage dry-etch process, and the dc characteristics measured up to 250 degree sign C. In the common-base mode, the collector current was approximately equal to the emitter current under all conditions. Although not optimized for power operations, the devices were tested up to power densities of {approx}50 kW cm-2. The dc current gain was in the range 20-25 at room temperature. The pnp configuration avoids the problem of high base sheet resistance encountered with npn-AlGaN/GaN devices. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216363
- Journal Information:
- Applied Physics Letters, Vol. 76, Issue 20; Other Information: PBD: 15 May 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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