Chemical vapor deposition of ruthenium and osmium films from mono- and bis-(cyclopentadienyl) complexes as precursors
- Vassar Coll., Poughkeepsie, NY (United States)
- IBM-TJ Watson Research Center, Yorktown Heights, NY (United States)
The authors have investigated cyclopentadienyl (Cp) complexes of Ru and Os as precursors for low temperature CVD of pure ruthenium and osmium films. Films were grown on a variety of substrates in a warm-walled CVD reactor, equipped with a resistively heated wafer chuck, mass-flow controllers for carrier gas regulation, and a mechanically-backed oil-vapor diffusion pump. Typical depositions were done under ca. 1 Torr total pressure. Use of air or oxygen as a carrier gas and Cp{sub 2}M (M = Ru or Os) as precursors gave high purity, conformal films of ruthenium and osmium at temperatures as low as 275 C and 350 C, respectively. Under these conditions, the only observable by-products were CO{sub 2} and H{sub 2}O, indicating that surface-catalyzed, complete oxidation of the ligands was involved in the decomposition process. Growth rates, film purities, resistivities and conformality were measured.
- OSTI ID:
- 82569
- Report Number(s):
- CONF-941144--; ISBN 1-55899-264-2
- Country of Publication:
- United States
- Language:
- English
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