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Chemical vapor deposition (CVD) of ruthenium and ruthenium dioxide thin films using hexafluoro-2-butynetetracarbonyl-ruthenium (0)

Conference ·
OSTI ID:141008
;  [1];  [2]
  1. Univ. of Minnesota, Minneapolis, MN (United States)
  2. Corporate Research Laboratory, St. Paul, MN (United States)

The known molecular ruthenium complex Ru(CO){sub 4}(hfb), where hfb stands for hexafluoro-2-butyne, has a vapor pressure of 1.5 torr at 2.5{degrees}C. Reflective ruthenium thin films were formed by CVD using H{sub 2} carrier gas with a growth rate of 210{angstrom}/min at 500{degrees}C, and exhibited a resistivity of 22{mu}{Omega}cm and a grain size of 500{angstrom}. Auger electron spectroscopy and X-ray diffraction (XRD) analyses indicate that the films are pure ruthenium with a hexagonal polycrystalline structure. Scanning electron microscopy and XRD analyses revealed that the deposition temperature and the presence of H{sub 2} gas affect the microstructure and crystallinity, and, therefore, the resistivity of the films. Ru(CO){sub 4}(hfb) also affords polycrystalline RuO{sub 2} thin films by CVD using air as a carrier gas. A growth rate of 50{angstrom}/min, a resistivity of 196{mu}{Omega} cm, and a grain size of 500 {angstrom} were found for depositions conducted at 500{degrees}C. The new dinuclear ruthenium complex Ru{sub 2}[{mu}-{eta}{sup 1}:{eta}{sup 1}:{eta}{sup 4}C{sub 4}(CF{sub 3}){sub 4}](CO){sub 6}, formed by flash pyrolysis of Ru(CO){sub 4}(hfb) at 150{degrees}C, can also be used as a precursor for a CVD of pure ruthenium thin films.

OSTI ID:
141008
Report Number(s):
CONF-930304--
Country of Publication:
United States
Language:
English