Soft X-ray photoemission studies of Hf oxidation

Journal Article · Fri Feb 01 04:00:00 EST 2002 · Journal of Vacuum Science & Technology A - Vacuum Surfaces and Films

OSTI ID:825308

Suzer, S ^[1]; Sayan, S; Banaszak Holl, M M; Garfunkel, E; Hussain, Z; Hamdan, N M

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1. LBNL Library

Soft X-Ray Photoemission Spectroscopy using surface sensitive Synchrotron Radiation has been applied to accurately determine the binding energy shifts and the valence band offset of the HfO2 grown on Hf metal. Charging of oxide films under x-rays (or other irradiation) is circumvented by controlled and sequential in-situ oxidation. Photoemission results show the presence of metallic Hf (from the substrate) with the 4f7/2 binding energy of 14.22 eV, fully oxidized Hf (from HfO2) with the 4f7/2 binding energy of 18.16 eV, and at least one clear suboxide peak. The position of the valence band of HfO2 with respect to the Hf(m) Fermi level is determined as 4.05 eV.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 825308
• Report Number(s): LBNL--50832
• Journal Information: Journal of Vacuum Science & Technology A - Vacuum Surfaces and Films, Journal Name: Journal of Vacuum Science & Technology A - Vacuum Surfaces and Films Journal Issue: 1 Vol. 21
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BINDING ENERGY
FERMI LEVEL
HF OXIDE XPS SYNCHROTRON RADIATION
IRRADIATION
OXIDATION
OXIDES
PHOTOEMISSION
SPECTROSCOPY
SYNCHROTRON RADIATION
VALENCE