Extreme Ultraviolet Lithography with laser plasma sources
Conference
·
OSTI ID:82484
Extreme Ultraviolet Lithography (EUVL) is being developed for the fabrication of integrated circuits having dimensions of {le} 0.13 {mu}m. The development and use of high-power, low-debris laser-produced plasma sources of 11--14 nm radiation for this application will be described.
- Research Organization:
- Sandia National Labs., Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 82484
- Report Number(s):
- SAND--95-8550C; CONF-9507122--2; ON: DE95010753
- Country of Publication:
- United States
- Language:
- English
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