New laser plasma source for extreme-ultraviolet lithography
- Center for Research and Education in Optics and Lasers, University of Central Florida, 12424 Research Parkway, Orlando, Florida 32826 (United States)
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature sizes, projection extreme-ultraviolet (EUV) lithography becomes an increasingly attractive technology. The radiation source of choice for this approach is a laser plasma with a high repetition rate. We report an investigation of a new candidate laser plasma source for EUV lithography that is based on line emission from ice-water targets. This radiation source has the potential to meet all the strict requirements of EUV conversion, debris elimination, operation, and cost for a demonstration lithographic system.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 165579
- Journal Information:
- Applied Optics, Journal Name: Applied Optics Journal Issue: 25 Vol. 34; ISSN APOPAI; ISSN 0003-6935
- Country of Publication:
- United States
- Language:
- English
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