Growth and Characterization of Quantum Dots and Quantum Dots Devices

Technical Report · Tue Apr 01 04:00:00 EST 2003

DOI:https://doi.org/10.2172/810938· OSTI ID:810938

CEDERBERG, JEFFREY G ^[1]; BIEFELD, ROBERT M; SCHNEIDER, H C; CHOW, WENG W

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1. Sandia National Laboratories

Quantum dot nanostructures were investigated experimentally and theoretically for potential applications for optoelectronic devices. We have developed the foundation to produce state-of-the-art compound semiconductor nanostructures in a variety of materials: In(AsSb) on GaAs, GaSb on GaAs, and In(AsSb) on GaSb. These materials cover a range of energies from 1.2 to 0.7 eV. We have observed a surfactant effect in InAsSb nanostructure growth. Our theoretical efforts have developed techniques to look at the optical effects induced by many-body Coulombic interactions of carriers in active regions composed of quantum dot nanostructures. Significant deviations of the optical properties from those predicted by the ''atom-like'' quantum dot picture were discovered. Some of these deviations, in particular, those relating to the real part of the optical susceptibility, have since been observed in experiments.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 810938
• Report Number(s): SAND2003-1354
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
MICROELECTRONIC CIRCUITS
MICROSTRUCTURE
MINIATURIZATION
OPTICAL PROPERTIES