Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots
- Universidad de Cadiz, Spain
- University of Warwick, UK
- Instituto de Microelectronica de Madrid (CNM, CSIC)
- ORNL
We report that Sb irradiation combined with the presence of a GaAs intermediate layer previous to the deposition of a GaSb layer over InAs quantum dots grown by molecular beam epitaxy improves the crystalline quality of these nanostructures. Moreover, this approach to develop III-V-Sb nanostructures causes the formation of quantum dots buried by a confining GaSb layer and, in this way, achieving a type II band alignment. Both phenomena, studied by Conventional transmission electron microscopy (CTEM) and scanning-transmission electron microscope (STEM) techniques are keys to achieve the best room temperature photoluminescence results from InAs/GaAs (001) quantum dots. The Sb flux contributes to the preservation of the quantum dots size and at the same time reduces In diffusion from the wetting layer.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1039946
- Journal Information:
- Advanced Science Letters, Journal Name: Advanced Science Letters Journal Issue: 11-12 Vol. 4; ISSN 1936-6612
- Country of Publication:
- United States
- Language:
- English
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