Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Journal Article · Tue Dec 14 23:00:00 EST 2010 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.82.235316· OSTI ID:21502912

Taboada, A G; Alonso-Alvarez, D; Alen, B; Rivera, A; Ripalda, J M; Llorens, J M; Martin-Sanchez, J; Gonzalez, Y ^[1]; Sanchez, A M ^[2]; Beltran, A M; Molina, S I ^[3]; Bozkurt, M; Ulloa, J M; Koenraad, P M ^[4]; Garcia, J M ^[1]

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1. Instituto de Microelectronica de Madrid, CNM (CSIC), C/Isaac Newton 8, PTM, 28760 Tres Cantos, Madrid (Spain)
2. Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
3. Departamento de Ciencia de los Materiales e I. M. y Q. I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro s/n, Puerto Real, Cadiz 11510 (Spain)
4. COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands)

We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 {mu}m accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

• OSTI ID: 21502912
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 23 Vol. 82; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ANTIMONY ADDITIONS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC FORCE MICROSCOPY
ATOMS
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
EMISSION
EVOLUTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LUMINESCENCE
MICROSCOPY
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM DOTS
SCATTERING
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT