Systematic investigation into the influence of growth conditions on InAs/GaAs quantum dot properties

Journal Article · Mon Oct 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2779270· OSTI ID:21062120

Passow, T; Li, S; Feinaeugle, P; Vallaitis, T; Leuthold, J; Litvinov, D; Gerthsen, D; Hetterich, M ^[1]

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1. Institut fuer Angewandte Physik, Universitaet Karlsruhe (Thailand) and DFG Center for Functional Nanostructures (CFN), Kaiserstrasse 12, 76128 Karlsruhe (Germany)

The influence of the conditions during growth of InAs/GaAs quantum-dot structures on GaAs(001) by molecular-beam epitaxy was investigated systematically with respect to achieving quantum-dot photoluminescence in the 1 eV range. The growth temperature, As flux, growth rate, InAs deposit, and growth interruption time before cap layer growth were varied. Photoluminescence spectroscopy and transmission electron microscopy were used to study the optical and structural properties. Large InAs quantum dots with photoluminescence in the 1 eV range were obtained at a low growth rate of 0.0056 ML/s. Analyzing in particular the low-growth-rate regime, we found that an InAs deposition of at least 2.4 ML and a growth temperature of 500-510 deg. C were crucial to obtain large quantum dots with a high size uniformity. Composition analyses by transmission electron microscopy revealed a significantly higher In concentration in the quantum dots grown at low growth rate compared to high-growth-rate samples.

• OSTI ID: 21062120
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
EV RANGE 01-10
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY