Molecular beam epitaxy of InAs and its interaction with a GaAs overlayer on vicinal GaAs (001) substrates

Journal Article · Fri Jul 01 00:00:00 EDT 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587802· OSTI ID:7247764

Lin, X W; Liliental-Weber, Z; Washburn, J; Weber, E R ^[1]; Sasaki, A; Wakahara, A; Nabetani, Y ^[2]

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1. Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
2. Department of Electrical Engineering, Kyoto University, Kyoto 606-01 (Japan)

GaAs/InAs/GaAs heterostructures were grown by molecular beam epitaxy on vicinal GaAs (001) substrates. Effects of substrate misorientation on the early stage of InAs epitaxy, as well as the interaction between InAs and a GaAs overlayer, were studied by transmission and scanning electron microscopies and by photoluminescence measurements. The formation of InAs islands were observed after a few monolayer InAs deposition. Two major results were obtained in this study: (a) Upon deposition of a crystalline GaAs overlayer, InAs islands undergo a novel type of morphological transition, i.e., from disk-shaped to ring-shaped ones. (b) Substrate misorientation results in anisotropic effects on InAs island formation. In comparison with on-axis or [110] tilted samples, substrate misorientation toward [1[bar 1]0] by up to 5[degree] leads not only to reduction in InAs island density by a factor of 2, but also to the formation of InAs quantum dots. These results were found to be consistent with photoluminescence experiments.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7247764
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 12:4; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INTERFACES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
ELECTRON MICROSCOPY
PHOTOLUMINESCENCE
SEMICONDUCTOR JUNCTIONS
TEMPERATURE RANGE 0400-1000 K
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LUMINESCENCE
MICROSCOPY
PNICTIDES
TEMPERATURE RANGE
360601* - Other Materials- Preparation & Manufacture