Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD

Journal Article · Thu Aug 15 04:00:00 EDT 2019 · Semiconductors

DOI:https://doi.org/10.1134/S1063782619080037· OSTI ID:22944885

Aleshkin, V. Ya. ^[1]; Baidus, N. V. ^[2]; Kudryavtsev, K. E. ^[1]; Nekorkin, S. M.; Kruglov, A. V.; Reunov, D. G. ^[2]

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1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)

The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 10{sup 10} cm{sup –2} is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm{sup 2}.

• OSTI ID: 22944885
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 53; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
CRYOGENIC FLUIDS
EPITAXY
GALLIUM ARSENIDES
HYDRIDES
INDIUM ARSENIDES
LASERS
NITROGEN
OPTICAL PUMPING
POWER DENSITY
QUANTUM DOTS
SILICON OXIDES
STIMULATED EMISSION
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS