The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

Journal Article · Tue Jan 15 04:00:00 EST 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608010144· OSTI ID:22004939

Vostokov, N V; Gaponova, D M; Danil'tsev, V M; Drozdov, M N; Drozdov, Yu N; Shashkin, V I ^[1]

---

1. Russian Academy of Sciences, Institute of Physics of Microstructures (Russian Federation)

A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 {mu}m at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 Multiplication-Sign 10{sup 9} cm Hz{sup 1/2}W{sup -1}.

• OSTI ID: 22004939
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INDIUM
INDIUM ARSENIDES
LAYERS
ORGANOMETALLIC COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOSENSITIVITY
QUANTUM DOTS
QUANTUM WELLS
THICKNESS
THIN FILMS
VAPOR PHASE EPITAXY