Oblique ion texturing of yttria-stabilized zirconia: The {l_brace}211{r_brace}<111> structure
- LBNL Library
Amorphous (Zr,Y)O{sub x} films were synthesized by reactive magnetron sputtering and subsequently crystallized by oblique ion bombardment. Crystalline texture nucleated by the ion beam was replicated by solid-phase epitaxial growth throughout the formerly amorphous yttria-stabilized zirconia (YSZ) film. The resulting YSZ films have (211) orientation normal to the substrate with in-plane directions (111), parallel, and (110), transverse, to the azimuth of the ion beam. We hypothesize that the texture mechanism involves ion-induced film compression and shear. The results, taken together with prior work, show that oblique ion texturing of amorphous films is a general phenomenon that can be used to fabricate substrates with more than one type of crystallographic orientation.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy. Distributed Energy & Electricity Reliability Program (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 808934
- Report Number(s):
- LBNL--51802; B& R EB5001000
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 82; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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