Band anticrossing in highly mismatched semiconductor alloys
Conference
·
OSTI ID:803854
- LBNL Library
The basic theoretical aspects of the band anticrossing effects in highly electronegativity-mismatched semiconductor alloys are reviewed. The many-impurity Anderson model treated in the coherent potential approximation is applied to the semiconductor alloys, in which metallic anion atoms are partially substituted by atoms of a highly electronegative element. Analytical solutions for the Green's function describe dispersion relations and state broadening effects for the restructured conduction band. The solutions are identical to those obtained from the physically intuitive and widely used two-level band anticrossing model. It is shown that the model explains key experimental observations including the unusual composition and pressure dependence of the interband optical transitions and the large enhancement of the electron effective mass.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Materials Science and Engineering Division (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 803854
- Report Number(s):
- LBNL--51164; B& R KC0201030
- Country of Publication:
- United States
- Language:
- English
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