EFFECTS OF P / N IN HOMOGENEITY ON CDZNTE RADIATION DETECTORS.
Conference
·
OSTI ID:799259
- BROOKHAVEN NATIONAL LABORATORY
Spectrometer grade, room-temperature radiation detectors have been produced on Cd{sub 0.90}Zn{sub 0.10}Te grown by the low-pressure Bridgman technique. Small amount of indium has been used to compensate the uncompensated Cd vacancies for the crystals to be semi-insulating. The properties of the detectors are critically dependent on the amount of excess Te introduced into the growth melts of the Cd{sub 0.90}Zn{sub 0.10}Te crystals and the best detectors are fabricated from crystals grown with 1.5% excess Te. Detector resolution of {sup 57}Co and {sup 241}Am radiation peaks are observed on all detectors except the ones produced on Cd{sub 0.90}Zn{sub 0.10}Te grown from the melt in the stoichiometric condition. The lack of resolution of these stoichiometric grown detectors is explained by a p/n conduction-type inhomogeneity model.
- Research Organization:
- Brookhaven National Lab., Upton, NY (US)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 799259
- Report Number(s):
- BNL--69312; 400409900
- Country of Publication:
- United States
- Language:
- English
Similar Records
Improved CdZnTe detectors grown by vertical Bridgman process
Optimal width of barrier region in X/{gamma}-ray Schottky diode detectors based on CdTe and CdZnTe
High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals
Book
·
Wed Dec 30 23:00:00 EST 1998
·
OSTI ID:323850
Optimal width of barrier region in X/{gamma}-ray Schottky diode detectors based on CdTe and CdZnTe
Journal Article
·
Wed Feb 06 23:00:00 EST 2013
· Journal of Applied Physics
·
OSTI ID:22102262
High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals
Journal Article
·
Sun Sep 08 20:00:00 EDT 2019
· Proceedings of SPIE - The International Society for Optical Engineering
·
OSTI ID:1604908