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High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals

Journal Article · · Proceedings of SPIE - The International Society for Optical Engineering
DOI:https://doi.org/10.1117/12.2529066· OSTI ID:1604908
 [1];  [1];  [1];  [1];  [1];  [2];  [3]
  1. Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
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High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te : In crystals grown by the vertical Bridgman technique. The Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te : In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd1-x-yMnxZnyTe crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 104 Ohm×cm to 106 Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers.
Research Organization:
Savannah River National Lab (SRNL), Aiken, SC (United States); Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Organization:
USDOE Office of Environmental Management (EM)
Grant/Contract Number:
AC09-08SR22470
OSTI ID:
1604908
Report Number(s):
SRNL-STI--2019-00486
Journal Information:
Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 111141; ISSN 0277-786X
Publisher:
SPIECopyright Statement
Country of Publication:
United States
Language:
English

References (9)

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Vertical unseeded vapor growth and characterization of Cd0.95Zn0.05Te crystals journal May 1985
Growth interface of In-doped CdMnTe from Te solution with vertical Bridgman method under ACRT technique journal October 2012
Compensated donors in semi-insulating Cd1−xMnxTe:In crystals journal October 2018
Structural, optical, magnetic and electrical properties of dilute magnetic semiconductor Cd1−xMnxTe journal January 2011
Diluted magnetic semiconductors journal August 1988
Effect of ${\rm Cd}_{0.9}{\rm Zn}_{0.1}{\rm Te\!:\!In}$ Crystals Annealing on Their High-Temperature Electrical Properties journal October 2011
Structural studies of Cd 0.95 Zn 0.05 Te and Cd 0.90 Mn 0.10 Te under pressure
  • Qadri, S. B.; Skelton, E. F.; Webb, A. W.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 4, Issue 4 https://doi.org/10.1116/1.574009
journal July 1986

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72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS