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Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1-x formed by N ion implantation

Journal Article · Wed Jan 16 04:00:00 EST 2002 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1481196· OSTI ID:795967

Yu, K M ^[1]; Walukiewicz, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Pillai, M R; Aziz, M J

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: USDOE Director, Office of Science. Office of Basic Energy Studies. Materials Science and Engineering Division (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 795967

Report Number(s):: LBNL--49416

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 80; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ION IMPLANTATION
LASERS
NITROGEN