Synthesis of GaNxAs1-x thin films by pulsed laser melting andrapid thermal annealing (PLM-RTA) of N+-implanted GaAs

Journal Article · Tue Mar 11 04:00:00 EST 2003 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1582393· OSTI ID:900773

Yu, K M; Walukiewicz, W; Scarpulla, M A; Dubon, O D; Wu, J; Jasinski, J; Liliental-Weber, Z; Beeman, J W; Pillai, M R; Aziz, M J

We present a systematic investigation on the formation of the highly mismatched alloy GaN{sub x}As{sub 1-x} using N{sup +}-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaN{sub x}As{sub 1-x} with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N{sup +} implantation dose, laser energy fluence and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaN{sub x}As{sub 1-x} films are discussed.

• Research Organization: Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic EnergySciences
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 900773
• Report Number(s): LBNL--52340; BnR: KC0201030
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 94; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ANNEALING
DEPOSITION
EFFICIENCY
LASERS
MELTING
OPTICAL PROPERTIES
SYNTHESIS
THIN FILMS