Two dimensionally patterned GaN{sub x}As{sub 1-x}/GaAs nanostructures using N{sup +} implantation followed by pulsed laser melting

Journal Article · Mon Sep 08 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2982424· OSTI ID:21175574

Kim, Taeseok; Aziz, Michael J; Narayanamurti, Venkatesh ^[1]

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1. Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138 (United States)

We present measurements on two dimensionally patterned GaN{sub x}As{sub 1-x} dots fabricated in a GaAs matrix using ion implantation followed by pulsed laser melting and rapid thermal annealing. The lithographically patterned GaN{sub x}As{sub 1-x} regions are imaged by ballistic electron emission microscopy (BEEM). By analyzing the BEEM spectra of the locally confined dots, we observe the decrease in the Schottky barrier height with nitrogen incorporation. The second derivatives of BEEM currents from unpatterned GaN{sub x}As{sub 1-x} films exhibit a decrease in {gamma}-like thresholds as the nitrogen concentration increases. The composition dependence of the thresholds agrees well with that of previously studied low temperature molecular beam epitaxy grown alloys.

• OSTI ID: 21175574
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
ELECTRON EMISSION
ELECTRON MICROSCOPY
ENERGY BEAM DEPOSITION
FIELD EMISSION
GALLIUM ARSENIDES
GALLIUM NITRIDES
ION IMPLANTATION
LASER RADIATION
MELTING
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITROGEN IONS
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
THIN FILMS