Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy
- Division of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States)
- Electrical and Computer Engineering Department, University of California at San Diego, La Jolla, California 92093 (United States)
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
The evolution of GaAs{sub 1-x}N{sub x} band structure at low nitrogen concentrations (up to x=0.021) is studied by ballistic electron emission microscopy (BEEM) spectra of Au/GaAs{sub 1-x}N{sub x} heterostructures. Two peaks observed in the second derivative BEEM spectra are identified with the contribution from the {gamma}- and L-like bands of GaAs{sub 1-x}N{sub x}. As the nitrogen concentration increases, the energetic separation between these peaks increases, with a relative decrease of the L-like band contribution to the BEEM current. In addition, we found a strong decrease of the Au/GaAs{sub 1-x}N{sub x} Schottky barrier with the nitrogen incorporation, from {approx}0.92 eV at x=0 down to {approx}0.55 eV at x=0.021. The observed Schottky barrier reduction approximates the GaAs{sub 1-x}N{sub x} band-gap reduction. (c) 2000 The American Physical Society.
- OSTI ID:
- 20215768
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 61, Issue 12; Other Information: PBD: 15 Mar 2000; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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