Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy

Journal Article · Wed Mar 15 04:00:00 EST 2000 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.61.R7861· OSTI ID:20215768

Kozhevnikov, M ^[1]; Narayanamurti, V ^[1]; Reddy, C V ^[1]; Xin, H P ^[2]; Tu, C W ^[2]; Mascarenhas, A ^[3]; Zhang, Y ^[3]

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1. Division of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States)
2. Electrical and Computer Engineering Department, University of California at San Diego, La Jolla, California 92093 (United States)
3. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

The evolution of GaAs{sub 1-x}N{sub x} band structure at low nitrogen concentrations (up to x=0.021) is studied by ballistic electron emission microscopy (BEEM) spectra of Au/GaAs{sub 1-x}N{sub x} heterostructures. Two peaks observed in the second derivative BEEM spectra are identified with the contribution from the {gamma}- and L-like bands of GaAs{sub 1-x}N{sub x}. As the nitrogen concentration increases, the energetic separation between these peaks increases, with a relative decrease of the L-like band contribution to the BEEM current. In addition, we found a strong decrease of the Au/GaAs{sub 1-x}N{sub x} Schottky barrier with the nitrogen incorporation, from {approx}0.92 eV at x=0 down to {approx}0.55 eV at x=0.021. The observed Schottky barrier reduction approximates the GaAs{sub 1-x}N{sub x} band-gap reduction. (c) 2000 The American Physical Society.

• OSTI ID: 20215768
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 12 Vol. 61; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON EMISSION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ENERGY GAP
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM NITRIDES
GOLD
SCHOTTKY EFFECT
SEMICONDUCTOR JUNCTIONS