Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation
- LBNL Library
No abstract prepared.
- Research Organization:
- Lawrence Berkeley National Lab., CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 787122
- Report Number(s):
- LBNL--47766
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 79; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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