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Far-infrared absorption in Sb-doped Ge epilayers near the metal-insulator transition

Journal Article · Thu Dec 06 04:00:00 EST 2001 · Applied Physics Letters

OSTI ID:795964

Bandaru, Jordana ^[1]; Beeman, Jeffrey W; Haller, Eugene E

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: National Aeronautics and Space Administration (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 795964

Report Number(s):: LBNL--49273

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 80; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ANTIMONY ADDITIONS
DOPED MATERIALS
FAR INFRARED RADIATION
GERMANIUM
PHASE TRANSFORMATIONS