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Far-infrared absorption in GaAs:Te liquid phase epitaxial films

Journal Article · Wed May 14 04:00:00 EDT 2003 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1624491· OSTI ID:823069

Cardozo, B L ^[1]; Haller, E E; Reichertz, L A; Beeman, J W

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: National Aeronautics and Space Administration (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 823069

Report Number(s):: LBNL--52677

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 83; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
FAR INFRARED RADIATION
GALLIUM ARSENIDES
LIQUID PHASE EPITAXY
TELLURIUM