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Complete scaling analysis of the metal-insulator transition in Ge:Ga: effects of doping-compensation and magnetic field

Journal Article · Tue Sep 09 04:00:00 EDT 2003 · Journal of the Physical Society of Japan

OSTI ID:840891

Itoh, K M ^[1]; Watanabe, M; Ootuka, Y; Haller, E E; Ohtsuki, T

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 840891

Report Number(s):: LBNL--57711

Journal Information:: Journal of the Physical Society of Japan, Journal Name: Journal of the Physical Society of Japan Journal Issue: 1 Vol. 73; ISSN JUPSAU; ISSN 0031-9015

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRICAL INSULATORS
GALLIUM
GERMANIUM
MAGNETIC FIELDS
METALS
PHASE TRANSFORMATIONS