Atomic Resolution Microscopy of Semiconductor Defects and Interfaces
Conference
·
OSTI ID:7880
- Sandia National Laboratories
The optical arrangement of the scanning transmission electron microscope (STEM) allows formation of incoherent images by use of a large annular detector. Here we show this capability in the imaging of defects in GaN and the interfacial region of an Au/GaAs ohmic contact. A resolution of around 0.15 nm is attained. Such Z-contrast images show strong atomic number contrast and allow the probe to be positioned accurately at the defect or interface for the purpose of performing high spatial resolution electron energy-loss spectroscopy (EELS).
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7880
- Report Number(s):
- SAND99-1303C
- Country of Publication:
- United States
- Language:
- English
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