Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Synthesis of InN/sub x/P/sub 1-x/ thin films by N ion implantation

Journal Article · · Applied Physics Letters
OSTI ID:776639

No abstract prepared.

Research Organization:
Lawrence Berkeley National Lab., CA (US)
Sponsoring Organization:
USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
776639
Report Number(s):
LBNL--47041
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 78; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

Similar Records

Synthesis of InN{sub x}P{sub 1-x} thin films by N ion implantation
Journal Article · Sun Feb 18 23:00:00 EST 2001 · Applied Physics Letters · OSTI ID:40205280

Formation of diluted III-V nitride thin films by N ion implantation
Journal Article · Thu Jan 18 23:00:00 EST 2001 · Journal of Applied Physics · OSTI ID:786969

Formation of diluted III-V nitride thin films by N ion implantation
Journal Article · Thu Jan 18 23:00:00 EST 2001 · Journal of Applied Physics · OSTI ID:787112