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Formation of diluted III-V nitride thin films by N ion implantation

Journal Article · Thu Jan 18 23:00:00 EST 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1388860· OSTI ID:787112

Yu, K M ^[1]; Walukiewicz, W; Wu, J; Beeman, J W; Ager, III, J W; Haller, E E; Shan, W; Xin, H P; Tu, C W; Ridgway, M C

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Research Organization:: Lawrence Berkeley National Lab., CA (US)

Sponsoring Organization:: USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 787112

Report Number(s):: LBNL--47384

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 90; ISSN JAPIAU; ISSN 0021-8979

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ION IMPLANTATION
NITRIDES
THIN FILMS