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Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs

Journal Article · Mon Aug 07 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1328766· OSTI ID:773790

Yu, K M ^[1]; Walukiewicz, W; Shan, W; Wu, J; Beeman, J W; Ager, III, J W; Haller, E E

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Research Organization:: Lawrence Berkeley National Lab., CA (US)

Sponsoring Organization:: USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 773790

Report Number(s):: LBNL--46618

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 77; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
ION IMPLANTATION
NITROGEN IONS
SULFUR IONS