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Title: The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC

Abstract

Results are reported for the passivation of interface states near the conduction band edge in SiO{sub 2}/SiC MOS capacitors using post-oxidation anneals in nitric oxide, ammonia and forming gas (N{sub 2}5%H{sub 2}). Anneals in nitric oxide and ammonia reduce the interface state density significantly for 4H-SiC, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO{sub 2}/SiC and SiO{sub 2}/SiC have different origins, and a model is described for interface state passivation by nitrogen in the SiO{sub 2}/SiC system. The peak inversion channel mobility measured for lateral 4H-SiC MOSFETs increases following NO passivation.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (US)
Sponsoring Org.:
USDOE Office of Science (US)
OSTI Identifier:
771405
Report Number(s):
P00-108517
TRN: AH200104%%317
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: Fifth International High Temperature Electronics Conference (HiTEC), Albuquerque, NM (US), 06/12/2000--06/15/2000; Other Information: PBD: 12 Jun 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMMONIA; CAPACITORS; NITRIC OXIDE; NITROGEN; PASSIVATION

Citation Formats

Chung, G Y, Tin, C C, Isaacs-Smith, T, Williams, J R, McDonald, K, DiVentra, M, Pantelides, S T, Feldman, L C, Weller, R A, and Holland, O W. The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC. United States: N. p., 2000. Web.
Chung, G Y, Tin, C C, Isaacs-Smith, T, Williams, J R, McDonald, K, DiVentra, M, Pantelides, S T, Feldman, L C, Weller, R A, & Holland, O W. The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC. United States.
Chung, G Y, Tin, C C, Isaacs-Smith, T, Williams, J R, McDonald, K, DiVentra, M, Pantelides, S T, Feldman, L C, Weller, R A, and Holland, O W. Mon . "The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC". United States. https://www.osti.gov/servlets/purl/771405.
@article{osti_771405,
title = {The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC},
author = {Chung, G Y and Tin, C C and Isaacs-Smith, T and Williams, J R and McDonald, K and DiVentra, M and Pantelides, S T and Feldman, L C and Weller, R A and Holland, O W},
abstractNote = {Results are reported for the passivation of interface states near the conduction band edge in SiO{sub 2}/SiC MOS capacitors using post-oxidation anneals in nitric oxide, ammonia and forming gas (N{sub 2}5%H{sub 2}). Anneals in nitric oxide and ammonia reduce the interface state density significantly for 4H-SiC, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO{sub 2}/SiC and SiO{sub 2}/SiC have different origins, and a model is described for interface state passivation by nitrogen in the SiO{sub 2}/SiC system. The peak inversion channel mobility measured for lateral 4H-SiC MOSFETs increases following NO passivation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {6}
}

Conference:
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