Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

Journal Article · Thu Jul 21 04:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4958852· OSTI ID:22597824

Mooney, P. M.; Jiang, Zenan; Basile, A. F. ^[1]; Zheng, Yongju; Dhar, Sarit ^[2]

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1. Physics Department, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada)
2. Physics Department, Auburn University, Auburn, Alabama 36849 (United States)

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

• OSTI ID: 22597824
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 120; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY
CAPACITANCE
CAPACITORS
CARBON
COMPARATIVE EVALUATIONS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRONS
ENERGY LEVELS
HYDROGEN 4
INTERFACES
MOSFET
NITRIC OXIDE
PASSIVATION
SILICA
SILICON
SILICON CARBIDES
SILICON OXIDES
TRAPPING
TRAPS