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Worst-Case Bias During Total Dose Irradiation of SOI Transistors

Journal Article · · IEEE Transactions on Nulcear Science
DOI:https://doi.org/10.1109/23.903751· OSTI ID:767860
 [1]; ; ; ; ; ; ;
  1. Sandia National Laboratories
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No abstract prepared.

Research Organization:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
767860
Report Number(s):
SAND2000-2864J
Journal Information:
IEEE Transactions on Nulcear Science, Journal Name: IEEE Transactions on Nulcear Science
Country of Publication:
United States
Language:
English

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Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DOSE RATES
IRRADIATION
RADIATION EFFECTS
TRANSISTORS