Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)
- Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)
Epitaxial potassium niobate thin films were deposited {ital in} {ital situ} by low pressure metalorganic chemical vapor deposition (MOCVD) at a growth temperature of 800 {degree}C using niobium pentaethoxide and potassium tert-butoxide as volatile metalorganic precursors. Growth on single crystal (100) lanthanum aluminate substrates produced [110]-oriented potassium niobate films. The films have a smooth, featureless morphology. Atomic force microscopy of the MOCVD-derived films surface indicates a root-mean-square roughness of less than 2 nm. Second-harmonic generation of 1.064 {mu}m incident light is observed from the potassium niobate thin films, and the effective second order nonlinear susceptibility {ital d} of the as-deposited film is as high as 13 pm/V. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- DOE Contract Number:
- FG02-85ER45209
- OSTI ID:
- 76390
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 67; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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