A review of metalorganic chemical vapor deposition of high-temperature superconducting thin films
Conference
·
OSTI ID:10117393
A status report is given on the metalorganic chemical vapor deposition (MOCVD) of high-temperature superconducting thin films. The advantages of MOCVD processing manifest themselves in the quality of the films produced, and in the economy of the process. Metalorganic precursor requirements, deposition parameters and film properties are discussed. Also difficulties have been identified in making MOCVD a manufacturing technology. To solve these problems, future research directions are proposed.
- Research Organization:
- Georgia Inst. of Tech., Atlanta, GA (United States). School of Physics
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG05-86ER45266
- OSTI ID:
- 10117393
- Report Number(s):
- CONF-8910361--1; ON: DE93005147
- Country of Publication:
- United States
- Language:
- English
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