Effects of Alternating Bias Irradiation on Defects in MOS Devices
Conference
·
OSTI ID:763107
- Sandia National Laboratories
No abstract prepared.
- Research Organization:
- Sandia National Labs., Albuquerque, NM, and Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 763107
- Report Number(s):
- SAND2000-2276C
- Country of Publication:
- United States
- Language:
- English
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