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Effect of Flux on the Defects and Electrical Behavior in Si Devices irradiated with He Ions.

Conference ·
OSTI ID:1582259
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Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1582259
Report Number(s):
SAND2018-9250C; 667283
Country of Publication:
United States
Language:
English

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