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Device Characteristics of the GaAs/InGaAsN/GaAs P-n-P Double Heterojunction Bipolar Transistor

Journal Article · Tue Aug 01 00:00:00 EDT 2000 · Electron Device Letter

OSTI ID:760013

CHANG, PING-CHIH ^[1]; LI, N Y; BACA, ALBERT G; HOU, H Q; MONIER, C; LAROCHE, J R; REN, F; PEARTON, S J

Sandia National Laboratories

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Research Organization:: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 760013

Report Number(s):: SAND2000-2039J

Journal Information:: Electron Device Letter, Journal Name: Electron Device Letter

Country of Publication:: United States

Language:: English

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Related Subjects

42 ENGINEERING
ALUMINUM-FREE
GALLIUM ARSENIDES
GALLIUM NITRIDES
HBT
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM NITRIDES
INGAASN
P-N-P
TRANSISTORS