RF Characteristics of GaAs/InGaAsN/GaAs P-n-P Double Heterojunction Bipolar Transistors
Conference
·
OSTI ID:761886
- Sandia National Laboratories
No abstract prepared.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 761886
- Report Number(s):
- SAND2000-2176C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Device Characteristics of the GaAs/InGaAsN/GaAs P-n-P Double Heterojunction Bipolar Transistor
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors
Device characteristics of the PnP AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistor
Journal Article
·
Tue Aug 01 00:00:00 EDT 2000
· Electron Device Letter
·
OSTI ID:760013
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors
Conference
·
Tue Aug 01 00:00:00 EDT 2000
·
OSTI ID:761865
Device characteristics of the PnP AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistor
Conference
·
Tue Feb 08 23:00:00 EST 2000
·
OSTI ID:751075