Simulation and Design of InGaAsN-Based Heterojunction Bipolar Transistors for Complementary Low-Power Applications

Journal Article · Tue Aug 01 00:00:00 EDT 2000 · Solid State Electronics

DOI:https://doi.org/10.1016/S0038-1101(00)00131-3· OSTI ID:760008

MONIER, CEDRIC; CHANG, PING-CHIH; LI, N Y; LAROCHE, J R; BACA, ALBERT G; HOU, H Q; REN, R; PEARTON, S J

No abstract prepared.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 760008
• Report Number(s): SAND2000-1998J; TRN: AH200037%%203
• Journal Information: Solid State Electronics, Other Information: Submitted to Solid State Electronics; PBD: 1 Aug 2000
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
DESIGN
HETEROJUNCTIONS
COMPUTERIZED SIMULATION
TRANSISTORS
INDIUM ARSENIDES
GALLIUM ARSENIDES
INDIUM NITRIDES
GALLIUM NITRIDES
TWO-DIMENSIONAL CALCULATIONS
ALGAS/INGAASN
HETEROJUNCTION BIPOLAR TRANSISTOR
TWO-DIMENSIONAL (2D) SIMULATION
PNP CONFIGURATION
DC CURRENT GAIN
DOPANT-GRADED DOPING
TURN-ON VOLTAGE
HIGH FREQUENCY CHARACTERISTICS