Simulation and Design of InGaAsN-Based Heterojunction Bipolar Transistors for Complementary Low-Power Applications
Journal Article
·
· Solid State Electronics
- Sandia National Laboratories
No abstract prepared.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 760008
- Report Number(s):
- SAND2000-1998J
- Journal Information:
- Solid State Electronics, Journal Name: Solid State Electronics
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ALGAS/INGAASN
COMPUTERIZED SIMULATION
DC CURRENT GAIN
DESIGN
DOPANT-GRADED DOPING
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTION BIPOLAR TRANSISTOR
HETEROJUNCTIONS
HIGH FREQUENCY CHARACTERISTICS
INDIUM ARSENIDES
INDIUM NITRIDES
PNP CONFIGURATION
TRANSISTORS
TURN-ON VOLTAGE
TWO-DIMENSIONAL (2D) SIMULATION
TWO-DIMENSIONAL CALCULATIONS
ALGAS/INGAASN
COMPUTERIZED SIMULATION
DC CURRENT GAIN
DESIGN
DOPANT-GRADED DOPING
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTION BIPOLAR TRANSISTOR
HETEROJUNCTIONS
HIGH FREQUENCY CHARACTERISTICS
INDIUM ARSENIDES
INDIUM NITRIDES
PNP CONFIGURATION
TRANSISTORS
TURN-ON VOLTAGE
TWO-DIMENSIONAL (2D) SIMULATION
TWO-DIMENSIONAL CALCULATIONS