Computer-aided Design of Plasma Processing Reactors Final Report CRADA No. TC-0339-92
- LLNL
A two-dimensional, time-dependent, numerical model of plasma discharges, INDUCT95, was developed based upon a fluid treatment of ions and electrons. For inductively coupled sources, electron heating from external radio frequency coils is calculated self-consistently by solving for the time-averaged power deposited within the plasma. Time dependent biasing of structures can be applied to treat capacitively coupled radio frequency discharges. Complex chemical volume and surface reactions can be treated for neutral gas mixtures. INDUCT95 solves for densities, temperatures, fluxes, and electro-static potential in a plasma discharge. Cylindrically symmetric (r,z) or Cartesian (x,y) coordinates can be used. Both metal and dielectric internal boundaries can be treated for complex structures. Ab initio calculations of cross sections for critical electron molecule collision processes involving etchant gases were completed and published. The theoretical work was accompanied by thorough investigations of processing plasmas and workpiece surface conditions during etching and deposition of semiconductor materials, using capacitively and inductively coupled RF, electron cyclotron resonance, helicon and helical resonator reactors. Comparison of theory and experiment demonstrates the role of the plasma conditions in controlling both the geometric and chemical evolution of the semiconductor wafer surface.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- Sponsoring Organization:
- USDOE Office of Defense Programs (DP)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 756971
- Report Number(s):
- UCRL-ID-138131; LLNL--TR-747901; CRADA No. TC-0339-92
- Country of Publication:
- United States
- Language:
- English
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