The unusual conduction band minimum formation of Ga(As{sub 0.5{minus}y}P{sub 0.5{minus}y}N{sub 2y}) alloys
Journal Article
·
· Physical Review Letters
The conduction band minimum formation of GaAs{sub 0.5{minus}y}P{sub 0.5{minus}y}N{sub 2y} is investigated for small nitrogen compositions (0.1% < 2y < 1.0%), by using a pseudopotential technique. This formation is caused by two unusual processes both involving the deep-gap impurity level existing in the dilute alloy limit y {r_arrow} 0. The first process is an anticrossing with the {Gamma}{sub Ic}-like extended state of GaAs{sub 0.5}P{sub 0.5}. The second process is an interaction with other impurity levels forming a subband. These two processes are expected to occur in any alloys exhibiting a deep-gap impurity level at one of its dilute limit.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 755603
- Report Number(s):
- SAND2000-1196J; TRN: AH200021%%48
- Journal Information:
- Physical Review Letters, Other Information: Submitted to Physical Review Letters; PBD: 11 May 2000
- Country of Publication:
- United States
- Language:
- English
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