Unusual evolution of the lowest unoccupied state in Ga(As{sub 0.5-y}P{sub 0.5-y}N{sub 2y})
The character of the lowest unoccupied state in the random Ga(As{sub 0.5-y}P{sub 0.5-y}N{sub 2y}) alloys is investigated for small nitrogen concentrations (0.1%<2y<1.0%) using a pseudopotential technique. As nitrogen is added to Ga(As{sub 0.5}P{sub 0.5}), this state evolves from an impurity localized level to a delocalized bandlike state. This evolution involves two processes. The first process is an anticrossing between the deep-gap nitrogen impurity level existing in the dilute alloy limit y{yields}0 and the {Gamma}{sub 1c}-like extended state of Ga(As{sub 0.5}P{sub 0.5}). The second process is the formation of an impurity subband due to the interaction of the deep-gap nitrogen levels. These two processes are expected to occur in any Ga(As{sub 1-x-y{sub 1}}P{sub x-y{sub 2}}N{sub y{sub 1}+y{sub 2}}) alloys for which x is larger than 0.3.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205670
- Journal Information:
- Physical Review B, Vol. 62, Issue 23; Other Information: Othernumber: PRBMDO000062000023015311000001; 101047PRB; PBD: 15 Dec 2000; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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