Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen
- Sandia National Laboratories
Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 755593
- Report Number(s):
- SAND2000-1115J
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters
- Country of Publication:
- United States
- Language:
- English
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