Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation
Experimental evidence for low minority-carrier diffusivity and mobility in highly doped Si:As is presented and explained by a simple model. The model emphasizes the carrier transport, including trapping, in the tail states of the minority-carrier band that will influence the minority-carrier mobility and diffusivity while not influencing the majority-carrier transport. The measured values for minority holes in n/sup +/-Si:As layers with doping concentrations of about 1.5 x 10/sup 20/ cm/sup -3/ are D/sub p/approx. =0.2 cm/sup 2//s and ..mu../sub p/approx. =6.3 cm/sup 2//Vs, which are about one order of magnitude smaller than the corresponding values for the majority holes. These new results pertain to device design and understanding of heavy doping effects and mechanisms.
- Research Organization:
- Department of Electrical Engineering, University of Florida, Gainesville, Florida 32611
- OSTI ID:
- 6657022
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:2; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ALLOYS
ARSENIC ADDITIONS
ARSENIC ALLOYS
CHARGE CARRIERS
CHARGE TRANSPORT
DATA
DESIGN
DIFFUSION
DOPED MATERIALS
ELEMENTS
EXPERIMENTAL DATA
HOLES
INFORMATION
MATERIALS
MATHEMATICAL MODELS
MOBILITY
NUMERICAL DATA
QUANTITY RATIO
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRAPPING