Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- School of Electrical Engineering and the MRSEC for Technology-Enabling Heterostructure Materials, Purdue University, West Lafayette, Indiana 47907-1285 (United States)
Measured minority and majority carrier mobility temperature dependencies in heavily doped {ital n}- and {ital p}-GaAs are compared. Majority carrier mobilities in heavily doped GaAs are essentially temperature ({ital T}) independent while minority carrier mobilities exhibit a roughly 1/{ital T} dependence. Majority carrier freezeout, which reduces both majority--minority carrier and ionized impurity scattering, is shown not to be responsible for the 1/{ital T} minority carrier mobility dependence. The difference in minority and majority carrier mobility {ital T} dependencies is explained in terms of the increased degree of degeneracy of majority carriers with decreased temperature, which decreases majority--minority carrier scattering. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 90465
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 67; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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