Minority and majority carrier transport characterization in compound semiconductors
A review of minority and majority carrier transport characterization techniques is presented. Minority transport is discussed in the context of base transport in HBTs where the base transit time can be an important component of the total transit time through the transistor. Characterization techniques to measure minority carrier mobilities in heavily-doped compound semiconductors and theoretical results are reviewed. Majority carrier transport in high-performance PHEMT structures is discussed. Parallel conduction of the heavily-doped contact layer and the 2-D electron gas makes measurements of the 2-D electron concentration difficult. Techniques to measure the 2-D concentration are reviewed. Recent application of these techniques have yielded new data for GaAs that has important implications for device design and shows the need for measurements of other CS-materials and devices to realize accurate device design and optimization.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 53710
- Report Number(s):
- SAND--95-0054C; CONF-950117--4; ON: DE95010873
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs
Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation